| 国产V型MCP和Z型MCP的增益特性研究 |
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| 引用本文： | 黄敏 戴丽英. 国产V型MCP和Z型MCP的增益特性研究[J]. 光电子技术, 1993, 13(3): 51-54 |
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| 作者姓名： | 黄敏 戴丽英 |
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| 作者单位： | 南京电子器件研究所 210016 |
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| 摘 要： | 采用多级MCP级联技术可大大提高MCP的增益。本文主要介绍了国产V型和Z型2种级联MCP的结构、增益特性测量,并对其测量结果进行了较详细的分析。
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| 关 键 词： | 增益 微通道板 象增器 光电倍增管 |
Electron Gain Characteristics Studies of V-Stack MCP and Z-Stack MCP |
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| Huang Min Dai Liying Zhao Wenjin Zhu Shihua Fu Qiang. Electron Gain Characteristics Studies of V-Stack MCP and Z-Stack MCP[J]. Optoelectronic Technology, 1993, 13(3): 51-54 |
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| Authors: | Huang Min Dai Liying Zhao Wenjin Zhu Shihua Fu Qiang |
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| Abstract: | A cascade MCP can provide higher electron gain. The structures of V-stack and Z-stack MCP and the measuring method of their electron gain characteristics are introduced. The measuring results are also discussed. |
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| Keywords: | V-stack MCP Z-stack MCP electron gain dark current |
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