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A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis |
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| Authors: | Siamak Salimy Antoine Goullet Ahmed Rhallabi Fatiha Challali Serge Toutain Jean Claude Saubat |
| Affiliation: | a IMN, Institut des Matériaux Jean Rouxel, CNRS UMR6502, 2 rue de la Houssinière, BP3222/44300 Nantes, France;b IREENA, Fédération CNRS Atlanstic, Université de Nantes, Polytech’Nantes, La Chantrerie, BP50609/44306 Nantes, France;c MHS Electronics, 92, route de Gachet, BP60601/44306 Nantes, France |
| Abstract: | An enhanced scalable compact model for on-chip RF CMOS spiral inductors is presented. By considering layout and technology parameters, under quasi-static approximation, the model elements are all expressed analytically and based on electromagnetic effects. Frequency dependent behavior of CMOS spiral such as skin and proximity effects, and decrease of equivalent series resistance due to substrate coupling is considered. The model is suitable to be easily implemented in design kits by foundry and provides interesting accuracy to be used by CMOS Radio Frequency Integrated Circuits designers. |
| Keywords: | CMOS Inductor model Physical model Spiral inductor RFIC Voltage Controlled Oscillators |
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