| GaN薄膜电子声成像和电子背散射衍射研究 |
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| 引用本文： | 邢艳辉,李影智,韩军,邓旭光,吉元,徐晨,沈光地.GaN薄膜电子声成像和电子背散射衍射研究[J].光电子．激光,2012(10):1909-1912. |
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| 作者姓名： | 邢艳辉 李影智 韩军 邓旭光 吉元 徐晨 沈光地 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室;北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室 |
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| 基金项目： | 国家高技术研究发展计划“863”(2008AA03Z402);国家自然科学基金(61204011);北京市自然科学基金(4102003,4112006,4092007);北京工业大学博士科研启动基金(X0002013200901,X0002013200902)资助项目 |
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| 摘 要： | 采用扫描电声显微镜(SEAM)和电子背散射衍射(EBSD)对异质外延在Al2O3衬底上GaN界面区域成像测试分析。异质外延失配应力导致在Al2O3和GaN界面附近的微区晶格畸变在SEAM的声成像中可以清楚看到,而且受应力影响集中区域的微区衬度差异明显。利用EBSD色带图及质量参数分析了失配应力变化,晶格应变和弹性形变在200nm内可以得到释放。
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| 关 键 词： | GaN 扫描电声显微镜(SEAM) 电子背散射衍射(EBSD) 扫描电子显微镜(SEM) |
Scanning electron acoustic microscopy and electron backscattering diffraction study of GaN/Al2O3 hetero-epitaxial layer film |
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| XING Yan-hui,LI Ying-zhi,DENG Xu-guang.Scanning electron acoustic microscopy and electron backscattering diffraction study of GaN/Al2O3 hetero-epitaxial layer film[J].Journal of Optoelectronics·laser,2012(10):1909-1912. |
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| Authors: | XING Yan-hui LI Ying-zhi DENG Xu-guang |
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| Affiliation: | College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China |
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| Abstract: | The GaN hetero-epitaxial layer on sapphire(Al2O3) substrate is studied through scanning electron acoustic microscopy(SEAM) and electron backscattering diffraction(EBSD).The micro-area lattice distortion resulting from the hetero-epitaxy mismatch strain at the interface of GaN and sapphire is observed clearly,and the contrast of the micro-area in concentrated region affected by strain is different significantly.The color code map and quality parameter of the electron backscattering diffraction(EBSD) are used to analyze the variation of the mismatch strain,and the lattice strain and elastic deformation could be released within 200 nm. |
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| Keywords: | GaN scanning electron acoustic microscopy(SEAM) electron backscattering diffraction(EBSD) scanning electron microscopy(SEM) |
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