GaInP气相外延中Si的掺杂行为及发光二极管材料的制备

用MOCVD方法生长GaInP及其掺杂材料，并对Si的掺杂行为进行了较详细的研究。采用低温度冲层技术可有效地控制高温（＞700℃）生长GaInP及其掺杂材料的组分，从而使得GaInP掺Si的电子浓度达8×1018cm－3。在此基础上，进行了GaInP发光二极管材料的生长，所得器件具有良好的I－V曲线。

The High Si-doping Behaviour and the Preparation of GaInP Visible Light-emitting Diodes Materials by MOCVD

GaInP grown bll MOCVD is studied with emphasis on high dopingbehaviour. The Iow-temperature-growth of GaInP layer is employed to control thecomposition of GaInP at higher temperatures (＞700℃). Undoped GaInP exhibitsa residual background concentration of 1016 cm-3. SiH4 is used as Si donor sourceand n-type carrier concentrations of up to 8×1018 cm-3 have been obtained. On thebasis of the above studies, p-n GaInP homostructure light-emitting diodes grownon GaAs substrates have been fabricated and characterized by means of currentvoltage measurement. A forward-bias turn-on voltage of 1V and a breakdown voltage of 10 V are obtained.