Direct,mass-analyzed ion-beam and arc-discharge deposition of diamondlike films |
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| Authors: | J-P. Hirvonen J. Koskinen R. Lappalainen A. Anttila M. Trkula |
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| Affiliation: | (1) Technology Division, Los Alamos National Laboratory Materials Science, 87545 Los Alamos, NM;(2) Department of Physics Siltavuorenpenger, University of Helsinki, 20 M, 00170 Helsinki, Finland;(3) Technology Division, Los Alamos National Laboratory Materials Science, 87545 Los Alamos, NM |
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| Abstract: | Utilizing mass-analyzed carbon beams at an energy range of 10 eV to 2 keV, we can fabricate diamondlike films with direct deposition. This process allows a very precise adjustment of deposition. This process allows a very precise adjustment of deposition parameters such as ion energy, ion current density, angle of incidence, and control of impurities at an isotopic level. We obtained a density of 3.3-3.5 g/cm3, which is very close to the corresponding values of natural diamond. The most serious disadvantage of direct deposition is a low growth rate. Using an arc-discharge method provides more feasible deposition rates while simultaneously retaining many beneficial effects of direct deposition. These results were also confirmed by spectroscopic studies that revealed similar characteristics on both films. This paper reviews deposition of diamondlike films produced with direct, mass-analyzed ion-beam and arc-discharge methods and presents some properties of these films. *Invited talk in TMS Spring Meeting, Anaheim, CA, February 1990 |
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| Keywords: | Diamondlike film ion beam deposition arc discharge technique |
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