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Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio
Authors:K. C. Das  S. P. Ghosh  N. Tripathy  G. Bose  A. Ashok  P. Pal  D. H. Kim  T. I. Lee  J. M. Myoung  J. P. Kar
Affiliation:1. Department of Physics and Astronomy, National Institute of Technology, Rourkela, 769008, India
2. Department of Electronics and Instrumentation Engineering, SOA University, Bhubaneswar, 751030, India
3. Department of Physics, Indian Institute of Technology Hyderabad, Yeddumailaram, 502205, India
5. Department of Materials Science and Engineering, Yonsei University, Seoul, 120749, Republic of Korea
4. Department of Bio-Nanotechnology, Gachon University, Gyeonggi-do, 461701, Republic of Korea
Abstract:
Keywords:
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