| 一种基于单片机技术的半导体激光器特性参数测量仪 |
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| 引用本文： | 李君霞,郭少华,葛春风. 一种基于单片机技术的半导体激光器特性参数测量仪[J]. 天津工业大学学报, 2005, 24(3): 47-49 |
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| 作者姓名： | 李君霞 郭少华 葛春风 |
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| 作者单位： | 1. 天津工业大学,理学院,天津,300160
2. 天津大学精密仪器与光电子技术学院,天津,300172 |
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| 摘 要： | 针对目前国内半导体激光器测量仪器系统庞大、操作复杂、测量周期长、价格昂贵、不易于推广的情况，研制了较低成本的半导体激光器特性参数测量装置．它能够方便、准确地测量激光器的重要参数，并能根据测得的电压一电流和功率一电流特性曲线对器件的质量和性能作出评价．
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| 关 键 词： | 激光器 阈值特性 功率—电流特性 |
| 文章编号： | 1671-024X(2005)03-0047-03 |
| 修稿时间： | 2004-12-14 |
A parameter measurement device of semiconductor LD based on the single-chip system |
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| LI Jun-xia,GUO Shao-hua,GE Chun-feng. A parameter measurement device of semiconductor LD based on the single-chip system[J]. Journal of Tianjin Polytechnic University, 2005, 24(3): 47-49 |
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| Authors: | LI Jun-xia GUO Shao-hua GE Chun-feng |
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| Affiliation: | LI Jun-xia~1,GUO Shao-hua~1,GE Chun-feng~2 |
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| Abstract: | According to the present status that testing system has the high testing precision, but it is very huge in size, difficult to operate, long term to test, and higher price, so it is difficult to use it widely. In the light the present condition, a new device is developed successfully with lower cost, which can measure the important parameter of LD precisely, and the idiocratic curve of LD can be got by processing the data got from our testing devive, such as voltage-current curve, optical power-current curve, and the performance of LD can also be evaluated. |
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| Keywords: | LD threshold feature power-current feature |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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