| 开管扩镓改善器件电参数性能的机理分析 |
| |
| 引用本文： | 孙瑛. 开管扩镓改善器件电参数性能的机理分析[J]. 半导体学报, 2002, 23(7): 746-751. DOI: 10.3969/j.issn.1674-4926.2002.07.015 |
| |
| 作者姓名： | 孙瑛 |
| |
| 作者单位： | 山东师范大学,济南,250014 |
| |
| 摘 要： | 叙述了SiO2/Si系开管扩镓工艺和镓掺杂原理,研究了镓掺杂与器件电参数的关系,并分析了改善器件性能的机理.实验证明,采用SiO2/Si系开管扩镓工艺,扩镓硅片表面状况、均匀性和重复性良好,镓杂质浓度分布理想,并能明显改善器件电参数性能,提高电参数一致性,增加成品率等,优于闭管扩镓、裸Si系开管扩镓和硼扩散.
|
| 关 键 词： | 开管镓掺杂 SiO2/Si系 机理 |
| 文章编号： | 0253-4177(2002)07-0746-06 |
| 修稿时间： | 2001-12-25 |
Mechanism of Improving Electric Performance of Device by Open-Tube Gallium Diffusion |
| |
| Sun Ying. Mechanism of Improving Electric Performance of Device by Open-Tube Gallium Diffusion[J]. Chinese Journal of Semiconductors, 2002, 23(7): 746-751. DOI: 10.3969/j.issn.1674-4926.2002.07.015 |
| |
| Authors: | Sun Ying |
| |
| Abstract: | The theory of the technics of open tube gallium diffusion and gallium diffusion are set forth,and the relationship between gallium diffusion and electric parameters of device is studied,and the mechanism to improve device performance is analyzed.It is proved from the experiment and practice that by using SiO 2/Si system and the technics of open tube gallium diffusion the surface of gallium diffused silicon flake is well distributed and well repeated,uniformity of gallium impurity is well distributed,the parameter of device performance is improved obviously,the consistency of electric parameter is hieghtened and the rate of finished product is improved. |
| |
| Keywords: | open tube gallium diffusion SiO 2/Si series mechanism |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
