Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications |
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Authors: | Ashok Kumar M. R. Alam A. Mangiaracina M. Shamsuzzoha |
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Affiliation: | (1) Department of Electrical Engineering, University of South Alabama, 36688 Mobile, AL;(2) Department of Metallurgical & Materials Engineering, University of Alabama, 35487 Tuscaloosa, AL |
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Abstract: | Ferroelectric lead-zirconate-titanate (PZT) thin films were deposited by the pulsed laser deposition technique on Pt-coated (100) Si substrates. This study was focused on the investigation of the PZT film growth on (100) Si substrate at varying deposition parameters and electrical characterization of the films including hysteresis loop and fatigue properties by RT66A Standardized Ferroelectric Test System. PZT deposited at higher temperature (575°C in 450 mTorr O2 partial pressure) showed the best crystalline structure. The remnant polarization and the retained polarization of the ferroelectric capacitors were 13 µC/cm2 and 20 µC/cm2, respectively. The crystallographic properties of the films were determined using the x-ray diffractometer method. The cross-sectional transmission electron microscope results showed very smooth interfaces among different layers of films. |
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Keywords: | Nonvolatile memory application pulsed laser deposition (PLD) lead-zirconate-titanate (PZT) |
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