| 最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT |
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| 引用本文： | 刘果果,魏珂,黄俊,刘新宇,牛洁斌.最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT[J].红外与毫米波学报,2011,30(4):289-292. |
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| 作者姓名： | 刘果果 魏珂 黄俊 刘新宇 牛洁斌 |
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| 作者单位： | 微电子器件与集成技术重点实验室,中国科学院微电子研究所,北京100029 |
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| 基金项目： | Supported by National Natural Science Foundation(60890191); National “973” program(2010CB327500) |
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| 摘 要： | 报道了最大振荡频率为200 GHz的基于蓝宝石衬底的AlGaN/GaN高电子迁移率晶体管(HEMT).外延材料结构采用InGaN背势垒层来减小短沟道效应,器件采用凹栅槽和T型栅结合的工艺,实现了Ka波段AlGaN/GaNHEMT.器件饱和电流达到1.1 A/mm,跨导为421 mS/mm,截止频率(fT)为30 GHz...
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| 关 键 词： | AlGaN/GaN HEMT 蓝宝石衬底 fmax InGaN背势垒 湿法腐蚀 |
| 收稿时间： | 6/9/2010 12:00:00 AM |
| 修稿时间： | 2011/6/13 0:00:00 |
AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier |
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| LIU Guo-Guo,WEI Ke,HUANG Jun,LIU Xin-Yu and NIU Jie-Bin.AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier[J].Journal of Infrared and Millimeter Waves,2011,30(4):289-292. |
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| Authors: | LIU Guo-Guo WEI Ke HUANG Jun LIU Xin-Yu and NIU Jie-Bin |
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| Affiliation: | LIU Guo-Guo,WEI Ke,HUANG Jun,LIU Xin-Yu,NIU Jie-Bin(Key Laboratory of Microelectronics Device & Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | A gate-recessed AlGaN/GaN high electron mobility transistor(HEMT) on sapphire substrate having fmax of 200 GHz is reported.The gate-recessed device with a T-shaped gate exhibits a maximum drain current density of 1.1 A/mm,and a peak value of 421 mS/mm for extrinsic transconductance with minimum short-channel effects because of an InGaN back-barrier layer.A unity current gain cut off frequency(fT) of 30 GHz and a maximum oscillation frequency(fmax) of 105 GHz were obtained.After removing SiN by wet etching,t... |
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| Keywords: | AlGaN/GaN HEMT sapphire substrate fmax InGaN back-barrier wet etching |
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