| 宽带偏振不灵敏张应变InGaAs半导体放大器光开关 |
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| 引用本文： | 王书荣,刘志宏,王圩,朱洪亮,张瑞英,丁颖,赵玲娟,周帆,王鲁峰.宽带偏振不灵敏张应变InGaAs半导体放大器光开关[J].半导体学报,2004,25(8). |
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| 作者姓名： | 王书荣 刘志宏 王圩 朱洪亮 张瑞英 丁颖 赵玲娟 周帆 王鲁峰 |
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| 作者单位： | 1. 中国科学院半导体研究所,光电子研发中心,北京,100083;云南师范大学太阳能研究所,昆明,650092
2. 中国科学院半导体研究所,光电子研发中心,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 研制了一种张应变准体InGaAs半导体放大器光开关.该结构具有显著的带填充效应,从而导致在80mA的注入电流下,器件的3dB光带宽大于85nm(1520～1609nm).该带宽几乎同时全部覆盖了C带(1525～1565nm)和L带(1570～1610nm).最为重要的是,在3dB光带范围内,光开关的偏振灵敏度小于0.7dB;光纤到光纤无损工作电流在70～90mA之间;消光比大于50dB.通过降低了载流子寿命,开关速度有所提高.在未来密集波分复用通信系统中,这种宽带偏振不灵敏半导体放大器光开关很有实用前景.
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| 关 键 词： | 半导体放大器光开关 宽带 偏振不灵敏 张应变准体InGaAs 光纤到光钎无损工作电流 消光比 |
Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs |
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| Abstract: | A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (＜0. 7dB),fiber-to-fiber lossless operation current (70～90mA) and a high extinction ratio (＞50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm)and the whole L band (1570～ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems. |
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| Keywords: | semiconductor optical amplifier gate wide bandwidth polarization-insensitive tensile-strained quasi bulk InGaAs fiber-to-fiber lossless operation current extinction ratio |
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