| 逆导型GCT关键参数的设计考虑 |
| |
| 引用本文： | 王彩琳,高勇. 逆导型GCT关键参数的设计考虑[J]. 半导体学报, 2004, 25(10) |
| |
| 作者姓名： | 王彩琳 高勇 |
| |
| 作者单位： | 西安理工大学电子工程系,西安,710048 |
| |
| 摘 要： | 提出了逆导型门极换流晶闸管(RC-GCT)中几个关键参数,如n-基区和透明阳极的厚度和浓度及隔离区的宽度等参数的设计方法.根据该设计方法建立了RC-GCT的结构模型,利用MEDICI模拟器对其正向阻断特性、导通特性及门-阴极的反向特性进行了模拟分析,结果证明这些设计考虑是合理的.
|
| 关 键 词： | 电力半导体器件 逆导型门极换流晶闸管 透明阳极 隔离区 |
Design Concept for Key Parameters of Reverse Conducting GCT |
| |
| Abstract: | Presented is design concept for key parameters of the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the width of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable. |
| |
| Keywords: | power semiconductor device reverse conducting gate commutated thyristor transparent anode separation region |
| 本文献已被 万方数据 等数据库收录！ |
|
