基于阳极键合干法刻蚀技术的MEMS隧道加速度计的加工及测试

提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺,用来加工微型隧道加速度计.采用HP4145B半导体分析仪在大气环境下对所加工的器件进行了开环测试,验证了隧道电流的存在以及隧道间隙与隧道电流之间的指数关系.实验结果外推出的隧道势垒的范围为1.182～2.177eV.大部分器件的开启电压在14～16V之间.在-1,0和+1g三种状态下对开启电压分别进行了测试,得到加速度计的灵敏度约为87mV/g.

Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry-Etched MEMS Tunneling Accelerometer

A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.The tunneling current under open loop operation is tested in the air by HP4145B semiconductor analyzer,which verifies the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current.The tunneling barrier is extrapolated to be from 1.182 to 2.177eV.The threshold voltages are tested to be 14～16V for most of the devices.The threshold voltages under -1,0,and +1g are tested,respectively,which shows the sensitivity of the accelerometer is about 87mV/g.