蓝牙收发器中的CMOS低噪声放大器的设计与测试

介绍了一种基于0.35μm CMOS数字工艺、集成于单片蓝牙收发器中的射频低噪声放大器.在考虑ESD保护和封装的情况下,从噪声优化、阻抗匹配及增益的角度讨论了电路的设计方法.经测试,在2.05GHz的中心频率处,S11为-6.4dB,S21为11dB,3dB带宽约为300MHz,噪声系数为5.3dB.该结果表明,射频电路设计需要全面考虑寄生效应,需要合适的封装模型以及合理的工艺.

Design and Test of a CMOS Low Noise Amplifier in Bluetooth Transceiver

A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S11 is -6.4dB,S21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.