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| 3C-SiC/Si异质结二极管的高温特性 | |
| 引用本文： | 张永兴,孙国胜,王雷,赵万顺,高欣,曾一平,李晋闽,李思渊. 3C-SiC/Si异质结二极管的高温特性[J]. 半导体学报, 2004, 25(9) |
| 作者姓名： | 张永兴 孙国胜 王雷 赵万顺 高欣 曾一平 李晋闽 李思渊 |
| 作者单位： | 1. 中国科学院半导体研究所,新材料部,北京,100083;兰州大学物理科学与技术学院,兰州,730000 2. 中国科学院半导体研究所,新材料部,北京,100083 3. 兰州大学物理科学与技术学院,兰州,730000 |
| 基金项目： | 国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划) |
| 摘 要： | 研究了低压化学气相淀积方法制备的n-3C-SiC/p-Si(100)异质结二极管(HJD)在300～480K高温下的电流密度-电压(J-V)特性.室温下HJD的正反向整流比(通常定义为±1V外加偏压下)最高可达1.8×104,在480K时仍存在较小整流特性,整流比减小至3.1.在300K温度下反向击穿电压最高可达220V.电容-电压特性表明该SiC/Si异质结为突变结,内建电势Vbi为0.75V.采用了一个含多个参数的方程式对不同温度下异质结二极管的正向J-V实验曲线进行了很好的拟和与说明,并讨论了电流输运机制.该异质结构可用于制备高质量异质结器件,如宽带隙发射极SiC/Si HBT等. |
| 关 键 词： | LPCVD 异质结二极管 高温特性 |
High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD |
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| Abstract: | The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors. |
| Keywords: | LPCVD heterojunction diodes high temperature characteristics |
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