| SiGe共振腔增强型探测器的制备 |
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| 引用本文： | 李传波,毛荣伟,左玉华,成步文,时文华,赵雷,罗丽萍,余金中,王启明.SiGe共振腔增强型探测器的制备[J].半导体学报,2004,25(12). |
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| 作者姓名： | 李传波 毛荣伟 左玉华 成步文 时文华 赵雷 罗丽萍 余金中 王启明 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 利用SOI材料的埋层二氧化硅的自停止特性,成功制作了具有高反射底镜的共振腔增强型SiGe探测器.底镜沉积于EPW腐蚀液腐蚀形成的背孔内,在1.2～1.5μm范围内,反射率高达99%.探测器的共振峰在1.344μm,光响应为1.2mA/W.与普通结构的探测器相比,文中所报道的探测器光响应有8倍的增强.
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| 关 键 词： | RCE 探测器 SOI SiGe |
Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector |
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| Li Chuanbo,Mao Rongwei,Zuo Yuhua,Cheng Buwen,Shi Wenhua,Zhao Lei,Luo Liping,Yu Jinzhong,Wang Qiming.Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J].Chinese Journal of Semiconductors,2004,25(12). |
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| Authors: | Li Chuanbo Mao Rongwei Zuo Yuhua Cheng Buwen Shi Wenhua Zhao Lei Luo Liping Yu Jinzhong Wang Qiming |
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| Abstract: | A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times. |
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| Keywords: | RCE detector SOI SiGe |
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