| 氨化Si基Ga2O3／Al2O3制备GaN薄膜 |
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| 引用本文： | 魏芹芹,薛成山,孙振翠,曹文田,庄惠照.氨化Si基Ga2O3／Al2O3制备GaN薄膜[J].稀有金属材料与工程,2005,34(2):312-315. |
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| 作者姓名： | 魏芹芹 薛成山 孙振翠 曹文田 庄惠照 |
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| 作者单位： | 山东师范大学,山东,济南,250014 |
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| 基金项目： | 国家自然科学基金重大研究计划资助(90201025);国家自然科学基金资助(60071006) |
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| 摘 要： | 研究了Ga2O3／Al2O3膜反应自组装制备GaN薄膜。首先利用磁控溅射法在硅衬底上制备Ga2O3／Al2O3膜，再将Ga2O3／Al2O3膜在高纯氨气气氛中氨化反应得到了GaN薄膜。用X射线衍射(XRD)，X光光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)和荧光光谱(PL)对样品进行结构、组分、形貌和发光特性的分析。测试结果表明：用此方法得到了六方纤锌矿结构的GaN晶体膜。
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| 关 键 词： | GaN Ga2O3／Al2O3膜 氮化 磁控溅射 |
| 文章编号： | 1002-185X(2005)02-0312-04 |
| 修稿时间： | 2003年5月28日 |
Formation of GaN Film by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate |
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| Wei Qinqin,Xue Chengshan,Sun Zhencui,Cao Wentian,Zhuang Huizhao.Formation of GaN Film by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate[J].Rare Metal Materials and Engineering,2005,34(2):312-315. |
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| Authors: | Wei Qinqin Xue Chengshan Sun Zhencui Cao Wentian Zhuang Huizhao |
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| Abstract: | Gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga2O3/Al2O3 films deposited by rf magnetron sputtering. The formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) , scanning electron microscopy (SEM) and photoluminescence spectrum(PL). The results indicate that the films formed are polycrystalline GaN with hexagonal wurtzite structure. |
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| Keywords: | GaN Ga_2O_3/Al_2O_3 film ammoniating magnetron sputtering |
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