| Behaviour of Ti Based on Si （111） Substrate at High Temperature in Oxygen |
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| 引用本文： | SUN Chuan-wei WANG Yu-tai LI Nian-qiang. Behaviour of Ti Based on Si （111） Substrate at High Temperature in Oxygen[J]. 半导体光子学与技术, 2007, 13(2): 161-163 |
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| 作者姓名： | SUN Chuan-wei WANG Yu-tai LI Nian-qiang |
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| 作者单位： | School of Information Science, University of Jinan, Jinan 250022, CHN |
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| 摘 要： | The behavior of Ti based on Si（lll） in oxygen under high temperatures（700 ℃, 800 ℃ , 900 ℃ , I 000 ℃ and 1 100℃） is reported. X-ray diffraction（XRD） and Fourier transform infrared spectroscopy （FTIR） are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.
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| 关 键 词： | TiSi2 TiO2 硅衬底 氧气 高温 钛行为 |
| 文章编号： | 1007-0206（2007）02-0161-03 |
| 收稿时间： | 2006-11-02 |
| 修稿时间： | 2007-01-15 |
Behaviour of Ti Based on Si(111) Substrate at High Temperature in Oxygen |
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| SUN Chuan-wei,WANG Yu-tai,LI Nian-qiang. Behaviour of Ti Based on Si(111) Substrate at High Temperature in Oxygen[J]. Semiconductor Photonics and Technology, 2007, 13(2): 161-163 |
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| Authors: | SUN Chuan-wei WANG Yu-tai LI Nian-qiang |
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| Abstract: | The behavior of Ti based on Si(111) in oxygen under high temperatures(700 ℃,800 ℃,900 ℃,1 000 ℃ and 1 100 ℃) is reported.X-ray diffraction(XRD) and Fourier transform infrared spectroscopy(FTIR) are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate. |
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| Keywords: | direct current magnetron sputtering TiSi2 TiO2 annealing |
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