| 交流磁控溅射制备ZAO薄膜工艺参数的研究 |
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| 引用本文： | 李士元,付恩刚,庄大明,张弓.交流磁控溅射制备ZAO薄膜工艺参数的研究[J].材料科学与工艺,2005,13(6):643-646. |
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| 作者姓名： | 李士元 付恩刚 庄大明 张弓 |
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| 作者单位： | 中兴通讯股份有限公司,深圳,518000;清华大学,机械工程系,北京,100084;Dept.of Physics,The University of Hong Kong,Hong Kong;清华大学,机械工程系,北京,100084 |
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| 摘 要： | 对于交流磁控溅射氧化锌铝陶瓷靶材制备ZAO薄膜,研究了氧流量、基体温度、靶电流密度、铝的掺杂量、本底真空压力和工作气体压力对ZAO薄膜电学性能的影响规律,优化了工艺参数,为工业化生产提供了实验依据.
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| 关 键 词： | 磁控溅射 ZAO薄膜 工艺参数 电阻率 |
| 文章编号： | 1005-0299(2005)06-0643-04 |
| 收稿时间： | 2004-01-14 |
| 修稿时间： | 2004年1月14日 |
Study on deposition parameters of ZAO films by AC magnetron sputtering |
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| LI Shi-yuan,FU En-gang,ZHUANG Da-ming,ZHANG Gong.Study on deposition parameters of ZAO films by AC magnetron sputtering[J].Materials Science and Technology,2005,13(6):643-646. |
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| Authors: | LI Shi-yuan FU En-gang ZHUANG Da-ming ZHANG Gong |
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| Affiliation: | 1. ZTE Corporation, Shenzhen, 518057; 2. Dept. of Mechanical Engineering, Tsinghua University, Beijing, 100084; 3. Dept. of Physics, The University of Hong Kong, Hong Kong |
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| Abstract: | The deposition parameters of ZAO thin films prepared by middle - frequency alternative magnetron sputtering with ZAO ceramic target were specifically analyzed and the effects of oxygen flux, substrate temperature, current density, Al concentration, base vacuum pressure and argon gas pressure on the electrical proper- ty of ZAO thin films were discussed. The optimum parameters for depositing ZAO thin films with low resistivity were obtained, which can provide practical and theoretical bases for its industrial production. |
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| Keywords: | Magnetron sputtering ZAO thin film deposition parameter resistivity |
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