Low noise RF MOSFETs on flexible plastic substrates |
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| Authors: | Kao HL Chin A Hung BF Lee CF Lai JM McAlister SP Samudra GS Won Jong Yoo Chi CC |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan; |
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| Abstract: | We report a low minimum noise figure (NF/sub min/) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-/spl mu/m RF MOSFETs, after thinning down the Si substrate to 30 /spl mu/m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NF/sub min/ to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-/spl mu/m node (L/sub g/=80 nm) devices. |
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