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关于全膜并联电容器真空浸渍工艺探讨
引用本文:李子华,唐青. 关于全膜并联电容器真空浸渍工艺探讨[J]. 电力电容器, 2012, 0(4): 58-64
作者姓名:李子华  唐青
作者单位:[1]苏州工业园区和顺电气股份有限公司,江苏苏州215021 [2]苏州电力电容器有限公司,江苏苏州215021
摘    要:在全膜并联电容器的制造过程中,真空浸渍工艺过程是极其关键的。全膜并联电容器真空浸渍工艺过程是否完善,既与电容器单元内部结构,尤其是元件结构及其在真空浸渍工艺过程所处的姿态密切相关,又与真空浸渍工艺过程中的3个关键参数,即:温度、真空度、时间,密不可分。本文对这两方面进行了初步探讨,希望对提升全膜并联电容器的产品质量有所帮助.

关 键 词:元件  温度  真空度  时间

Discussion on Vacuum Impregnation Process for All-film Shunt Capacitors
LI Zi-hua,TANG Qing. Discussion on Vacuum Impregnation Process for All-film Shunt Capacitors[J]. Power Capacitors, 2012, 0(4): 58-64
Authors:LI Zi-hua  TANG Qing
Affiliation:1. Suzhou Industries Park Heshun Electrical Co., Ltd., Suzhou 215021 ,China; 2. Suzhou Power Capacitors Co., Ltd., Suzhou 215021 ,China)
Abstract:The vacuum impregnation process is extremely critical in the production process of all-film shunt capacitors. Perfection of vacuum impregnation process of all-film shunt capacitors production is closely related not only to internal structure of all-film shunt capacitor unit, especially to the ele- ments structure and its configuration in the process of vacuum impregnation, but also to such three key parameters in the process as temperature, vacuum and time. In this paper, a preliminary dis- cussion on those two aspects is made, which is expected to help to improve quality of all-film shunt capacitors.
Keywords:elements  temperature  vacuum  time
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