Ambipolar carrier transport in an optically controllable diarylethene thin film transistor |
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| Affiliation: | 1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan;2. Electrical Engineering, Graduate School of Science and Technology, Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan;3. Department of Synthetic Chemistry and Biological Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto, 615-8510, Japan;1. Department of Chemical Engineering, University of New Brunswick, P.O. Box 4400, Fredericton, New Brunswick E3 B 5A3, Canada;2. Department of Science and Humanities, Rathinam Technical Campus, Eachanari, Coimbatore 641 021, India;3. Key Laboratory of Bio-based Material Science and Technology of Ministry of Education, Northeast Forestry University, Harbin 150040, China;4. School of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China;1. Department of Electrical and Electronic Engineering, University of Cagliari, Piazza D''Armi, 09123, Cagliari, Italy;2. Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), Namur Institute of Structured Matter, University of Namur, rue de Bruxelles 61, B-5000, Namur, Belgium;3. Imec, Kapeldreef 75, B-3001, Leuven, Belgium;1. Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, PR China;2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, PR China;3. Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA |
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| Abstract: | Ambipolar carrier transport is demonstrated in an optically controllable organic field-effect transistor, where a benzothienothiophene-substituted diarylethene (BTT-DAE) thin film is employed directly as the transistor channel. A closed-ring isomer, which is produced by ultraviolet (UV) light irradiation, allows the carrier injection of both holes and electrons from source-drain electrodes into the BTT-DAE layer. Moreover, alternate UV or visible (VIS) light irradiation induces marked switching in the drain currents caused by reversible photoisomerization between closed-ring (semiconductor) and open-ring (insulator) isomers. The light-driven on/off ratio, which is defined by the ratio of the drain currents in the sample after UV or VIS light irradiation, reaches 240 for hole transport. The value is comparable to the gate-voltage-induced on/off ratio of 160. Our findings, therefore, have a potential to lead to the construction of new optoelectronic devices such as photoreconfigurable logic circuits and light emitting transistors. |
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| Keywords: | Ambipolar operation Optical switching Diarylethene Photochromism Organic field-effect transistor |
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