Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes |
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Authors: | Siddhartha Ghosh Shubhrangshu Mallick Koushik Banerjee Christoph Grein Silviu Velicu Jun Zhao Don Silversmith Jean Baptist Rodriguez Elena Plis Sanjay Krishna |
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Affiliation: | (1) Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK |
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Abstract: | Mid-wavelength infrared (MWIR) p
+–n
−–n
+ avalanche photodiodes (APDs) were fabricated using two materials systems, one with mercury cadmium telluride (HgCdTe) on
a silicon (Si) substrate and the other with an indium arsenide/gallium antimonide (InAs/GaSb) strained layer superlattice
(SLS). Diode characteristics, avalanche characteristics, and excess noise factors were measured for both sets of devices.
Maximum zero-bias resistance times active area (R
0
A) of 3 × 106 Ω cm2 and 1.1 × 106 Ω cm2 and maximum multiplication gains of 1250 at −10 V and 1800 at −20 V were measured for the HgCdTe and the SLS, respectively,
at 77 K. Gains reduce to 200 in either case at 120 K. Excess noise factors were almost constant with increasing gain and were
measured in the range of 1 to 1.2. |
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Keywords: | Mid-wavelength infrared strain layer superlattice mercury cadmium telluride avalanche photodiode multiplication gain excess noise factor molecular beam epitaxy |
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