Characterization of Si/GexSi1 − x heterojunction bipolar transistors formed by Ge ion implantation in Si

Epitaxial Si/Ge_xSi_{1 − x} heterojunctions were formed by high dose Ge ion implantation in Si followed by rapid thermal annealing at 1000°C for 10 s. This technique was adopted to fabricate Si/Ge_xSi_{1 − x} heterojunction n-p-n bipolar transistors (HBT) using a self-aligned, double polycrystalline silicon process commonly used for fast Si bipolar transistors. The devices are characterized by a 60 nm wide neutral base with a Ge concentration peak of ≈ 7 at.% at the base-collector junction. Good static and dynamic electrical characteristics are demonstrated and discussed.