| 多孔硅红外光激发上转换兰光特性 |
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| 引用本文： | 崔德升,刘彩池.多孔硅红外光激发上转换兰光特性[J].河北工业大学学报,1997,26(4):16-19. |
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| 作者姓名： | 崔德升 刘彩池 |
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| 作者单位： | 河北工业大学材料研究中心!天津，300130 |
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| 摘 要： | 采用电化学腐蚀法制备多孔硅（ＰＳ），测量了ＰＳ在近红外光（８００ｎｍ）激发下的光致发光（ＰＬ）谱和光致发光激发（ＰＬＥ）谱，结果表明ＰＳ具有良好的上转换荧光特性，并随着存放时间的延长，在一定期了内峰值强度有明显的增强，这种非线性光这响应的增强，被认为与空间量子限制效应作用下局域束缚激子被激发有关，硅片初始电阻率赵低发光强度越大。
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| 关 键 词： | 多孔硅 光激发 上转换 荧光 |
Infrared-excitation Upconversion Blue Light Characteristics of Porous Silicon |
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| Cui Desheng,Liu Caichi,Ren Bingyan,Zhang Yinghuai.Infrared-excitation Upconversion Blue Light Characteristics of Porous Silicon[J].Journal of Hebei University of Technology,1997,26(4):16-19. |
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| Authors: | Cui Desheng Liu Caichi Ren Bingyan Zhang Yinghuai |
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| Affiliation: | Cui Desheng;Liu Caichi;Ren Bingyan;Zhang Yinghuai |
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| Abstract: | The photoluminescence (PL) spectra and Photoluminescence excitation (PLE) spectra under near infrared (800nm) excitation tested from porous silicon (PS) prepared by electrochemical anodization method show that PS has efficient infrared - upconversion luminescence,and the peak intensity increases obviously as the reserved time prolonged' This nonlinear optical response enhancement effect is due to the excited local binded exciton affected by space quantum confined effect. The lower the resistivity of initial silicon wafer is,the stronger the light will be. |
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| Keywords: | Porous Silicon Light Excitation Upconversion Luminescence |
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