| GaN半导体研究与进展 |
| |
| 引用本文： | 顾忠良. GaN半导体研究与进展[J]. 微纳电子技术, 1999, 0(4) |
| |
| 作者姓名： | 顾忠良 |
| |
| 作者单位： | 河北半导体研究所!石家庄 050051 |
| |
| 摘 要： | 介绍了 Ｇａ Ｎ 器件制备的关键技术以及 Ｇａ Ｎ 半导体在微电子和光电子领域的研究进展情况。
|
| 关 键 词： | 氮化镓 光电子 微电子 宽带隙半导体 |
Research and Development of GaN Semiconductor |
| |
| Gu Zhongliang. Research and Development of GaN Semiconductor[J]. Micronanoelectronic Technology, 1999, 0(4) |
| |
| Authors: | Gu Zhongliang |
| |
| Abstract: | In this paper,the key technologies for GaN materials and devices are reviewed.The progress of GaN semiconductor in microelectronics and optoelectronics is presented. |
| |
| Keywords: | GaN Optoelectronics Microelectronics Wide bandgap semiconductor |
| 本文献已被 CNKI 等数据库收录！ |
