Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique |
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Authors: | Kazuhiko Suzuki S Seto A Iwata M Bingo T Sawada K Imai |
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Affiliation: | (1) Hokkaido Institute of Technology, 006-8585 Sapporo, Japan;(2) Ishikawa National College of Technology, 929-0392 Ishikawa, Japan |
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Abstract: | The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility
and mobility lifetime product of 950 cm2/Vs and 1.6 × 10−4cm2/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm2/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical
mobility obtained by iterative solution of the Boltzmann equation. |
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Keywords: | Time-of-flight Cd0 9Zn0 1Te alloy scattering charge carrier drift mobility |
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