| 低温基区轻掺杂硅双极晶体管的温度比例因子设计规则 |
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| 引用本文： | 韩奇,沈克强.低温基区轻掺杂硅双极晶体管的温度比例因子设计规则[J].固体电子学研究与进展,1997,17(4):351-359. |
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| 作者姓名： | 韩奇 沈克强 |
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| 作者单位： | 东南大学微电子中心!南京，210096 |
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| 摘 要： | 通过对电流增益温度模型的分析，表明发射区重掺杂引起的禁带变窄效应是低温下双极晶体管电流增益衰变的主要原因，提出了用温度比例因子设计低温基区轻掺杂双极晶体管的新设计方法，计算机模拟表明结果良好。
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| 关 键 词： | 低温 基区轻掺杂 温度比例因子 禁带变窄 |
Temperature-scaling Theory for Low-temperature-operated Lightly Doped Base Bipolar Transistor |
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| Han Qi, Shen Keqiang ,Wei Tongli.Temperature-scaling Theory for Low-temperature-operated Lightly Doped Base Bipolar Transistor[J].Research & Progress of Solid State Electronics,1997,17(4):351-359. |
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| Authors: | Han Qi Shen Keqiang Wei Tongli |
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| Abstract: | The analysis of current gain model demonstrates that bipolar transistor suffers serious current gain degradation at low-temperature mainly due to bandgap narrowing in heavily doped emittcr. A novel principle is suggested for the optimum design of lightly doped base bipolar transistor operated at low-temperature. Results of computer simulation are good. |
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| Keywords: | Low Temperature Lightly Doped Base Temperature-scaling Factor Bandgap Shrinkage |
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