Statistical analysis of excitonic transitions in single,free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit |
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Authors: | Carsten Pfüller Oliver Brandt Timur Flissikowski Caroline Chèze Lutz Geelhaar Holger T Grahn Henning Riechert |
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Affiliation: | 1.Paul-Drude-Institut für Festk?rperelektronik,Berlin,Germany |
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Abstract: | Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature
micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each
nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding
to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined
by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according
to Poissonian statistics. |
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