Joining of silicon nitride to silicon nitride and to Invar alloy using an aluminium interlayer |
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Authors: | Katsuaki Suganuma Taira Okamoto Mitsue Koizumi Masahiko Shimada |
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Affiliation: | (1) Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, 567 Osaka, Japan;(2) Faculty of Engineering, Tohoku University, Aramaki Aza-Aoba, Sendai, 980 Miyagi, Japan |
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Abstract: | Si3N4 has been bonded to Si3N4 and to the Invar alloy using an aluminium interlayer at temperatures above the melting point of aluminium. Reaction was hardly observed at the interface between Si3N4 and aluminium up to 1223 K. The highest strength of the Si3N4-Al-Si3N4 joints was beyond 500 M Pa. In the Si3N4-Al-Invar joint, two main intermetallic compound layers were formed at the AI-Invar interface. The strength of the joints was between 150 and 200 MPa. It is expected that the aluminium layer and the reaction layer with the fine cracks growing perpendicular to the interface play an important role to compensate for the thermal expansion mismatch. |
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