| 陷阱分布模型对非晶Si太阳电池性能的影响 |
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| 引用本文： | 吴正军,顾晓峰. 陷阱分布模型对非晶Si太阳电池性能的影响[J]. 微纳电子技术, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.002 |
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| 作者姓名： | 吴正军 顾晓峰 |
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| 作者单位： | 江南大学信息工程学院,江苏,无锡,214122 |
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| 基金项目： | 教育部留学回国人员科研启动基金 |
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| 摘 要： | 利用TCAD软件模拟分析了ITO/p-a-Si:H/i-a-Si:H/n-a-Si:H结构的非晶硅太阳电池的J-V特性,研究了不同缺陷分布模型对太阳电池光电特性的影响。利用一种较精确的陷阱模型优化了太阳电池的结构参数,重点研究了本征层厚度对太阳电池光电特性的影响。模拟实验表明,氢化非晶硅(a-Si:H)PIN结构太阳电池本征层厚度存在一个最佳区间,在该区间电池总体性能较为理想,包括对应的光电转换效率达到峰值。得到的a-Si:H太阳电池填充因子可达到约0.8,最高光电转换效率可达到约13%。
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| 关 键 词： | 非晶硅 太阳电池 p型-本征型-n型半导体(PIN) 陷阱模型 光电特性 |
Effects of Trap Models on Properties of a-Si Solar Cells |
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| Wu Zhengjun,Gu Xiaofeng. Effects of Trap Models on Properties of a-Si Solar Cells[J]. Micronanoelectronic Technology, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.002 |
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| Authors: | Wu Zhengjun Gu Xiaofeng |
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| Affiliation: | School of Information Technology;Jiangnan University;Wuxi 214122;China |
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| Abstract: | The J-V characteristics of a-Si solar cells with a structure of ITO/p-a-Si:H/i-a-Si:H/n-a-Si:H were analyzed using TCAD software.Effects of different defect distribution models on the photoelectrical characteristics were investigated.Structure parameters of the solar cells were optimized under a more accurate trap model,and the effect of the intrinsic layer thickness on the photoelectrical properties was systematically investigated.The simulation results indicate that there exists an optimal intrinsic layer... |
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| Keywords: | amorphous silicon solar cell PIN(positive-intrisic-negative) trap model photoelectrical characteristics |
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