| Affiliation: | 1. Micro-electronics and Instrumentation Laboratory, Science Faculty of Monastir, Environment Boulevard, Monastir 5019, Tunisia
Centre de Génie Electrique de Lyon, Villeurbanne Cedex F-69621, France;2. Micro-electronics and Instrumentation Laboratory, Science Faculty of Monastir, Environment Boulevard, Monastir 5019, Tunisia;3. Centre de Génie Electrique de Lyon, Villeurbanne Cedex F-69621, France |
| Abstract: | Accurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (IRM, VRM and trr). With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained. Copyright © 2007 John Wiley & Sons, Ltd. |
