首页 | 本学科首页   官方微博 | 高级检索  
     


A new approach for numerical simulation of quantum transport in double-gate SOI
Authors:Tarek M. Abdolkader
Affiliation:Department of Basic Sciences, Benha Higher Institute of Technology, Egypt
Abstract:Numerical simulation of nanoscale double-gate SOI (Silicon-on-Insulator) greatly depends on the accurate representation of quantum mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate-oxides in the direction normal to the interfaces, and the quantum transport of carriers along the channel. In a previous work, the use of transfer matrix method (TMM) was proposed for the simulation of the first effect. In this work, TMM is proposed to be used for the solution of Schrodinger equation with open boundary conditions to simulate the second quantum-mechanical effect. Transport properties such as transmission probability, carrier concentration, and IV characteristics resulting from quantum transport simulation using TMM are compared with that using the traditional tight-binding model (TBM). Comparison showed that, when the same mesh size is used in both methods, TMM gives more accurate results than TBM. Copyright © 2007 John Wiley & Sons, Ltd.
Keywords:double-gate devices  quantum transport  numerical simulation  transfer matrix method
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号