MOS integrated piezoresistive microsensors |
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| Authors: | V. P. Dragunov |
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| Affiliation: | (1) Novosibirsk State Technical University, Novosibirsk, Russia |
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| Abstract: | A comparative performance analysis is reported that addresses different circuit configurations of MOS integrated piezoresistive microsensor. It is proposed that circuit configurations be evaluated in terms of two sensitivities to process-induced spread in circuit parameters as well as in terms of piezoresistive sensitivity. The sensitivities are calculated subject to circuit-parameter correlation.Translated from Mikroelektronika, Vol. 34, No. 1, 2005, pp. 65–71.Original Russian Text Copyright © 2005 by Dragunov. |
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