| 特种传声器管可靠性分析 |
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| 引用本文： | 张超越.特种传声器管可靠性分析[J].电声技术,2011,35(12):18-20,26. |
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| 作者姓名： | 张超越 |
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| 作者单位： | 中石化中原油田分公司信息中心,河南濮阳,457001 |
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| 摘 要： | 驻极体电容传声器(简称话筒)其专用结型场效应( JFET)与正向箝位二极管D1组成简单组合器件,称之为传声器管.该产品由P+N结栅控制沟道电流,不同于MOST的绝缘栅结构.因此在设计中并没有静电放电(ESD)防护装置.并且执行的标准截然不同,随着传声器管的应用逐渐扩大,要求提高电性能；为了抗射频(RF)噪声干扰在传声器...
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| 关 键 词： | 静电放电 射频 P+N结栅 绝缘栅 正向箝位 |
Analysis on Reliability of the Special Device |
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| ZHANG Chaoyue.Analysis on Reliability of the Special Device[J].Audio Engineering,2011,35(12):18-20,26. |
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| Authors: | ZHANG Chaoyue |
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| Affiliation: | ZHANG Chaoyue(Information Center,Sinopec Zhongyuan Petroleum Co.,Ltd.,Puyang Henan 457001,China) |
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| Abstract: | The junction type field effect transistor（JFET）is specially used in electret conderser microphone.The JFET and the forward champing diode D1 are combined into the simple combined device.It is different from the insulation gate structure of MOST,its channel current is controled by P＋N junction gate.So,it has no electro-static discharge（ESD）protection equipment in its design.And its executive standard is different.with the enlargement of JFET＇S application,its eletricity performance should be improved.In order to resist the interference of RF noise,and protect the former P＋N junction,in JFET＇S die,integrate a 10~30pF＇S PN junction condenser to improve the effect of electro static breakdown,thus expend the application of JFET. |
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| Keywords: | ESD RF P＋N Junction gate insulation gate forward champing |
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