Properties of wide-mesastripe InGaAsP/InP lasers |
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| Authors: | E. G. Golikova V. A. Kureshov A. Yu. Leshko A. V. Lyutetskii N. A. Pikhtin Yu. A. Ryaboshtan G. A. Skrynnikov I. S. Tarasov Zh. I. Alferov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3–1.5 µm were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10–60°C. The temperature of the active region of the diode laser is higher by 30–60°C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 µm, respectively. |
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