| 硅片CMP抛光工艺技术研究 |
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| 引用本文： | 刘玉岭.硅片CMP抛光工艺技术研究[J].电子工艺技术,2010,31(5). |
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| 作者姓名： | 刘玉岭 |
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| 作者单位： | 中国电子科技集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 介绍了硅片机械-化学抛光技术,重点分析了10.16 cm硅片抛光加工过程中抛光液的pH值、抛光压力和抛光垫等因素对硅片抛光去除速率及表面质量的影响.通过试验确定了硅片抛光过程中合适的工艺参数,同时对抛光过程中出现的各种缺陷进行了分析总结,并提出了相应的解决方案.
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| 关 键 词： | 硅片 化学机械抛光 去除速率 缺陷 |
Study on Chemical Mechanical Polishing of Silicon Wafer |
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| LIU Yu-ling.Study on Chemical Mechanical Polishing of Silicon Wafer[J].Electronics Process Technology,2010,31(5). |
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| Authors: | LIU Yu-ling |
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| Affiliation: | LIU Yu-ling(The 46th Research Institute of CETC,Tianjin 300220,China) |
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| Abstract: | The CMP technology of silicon wafers was described.The pH value of slurry,polishing pressure,polishing cloth on material removal rate and surface quality of the 10.16 cm silicon wafer was focused to investigate.The appropriate process parameters were acquired,besides,some kinds of defects which appeared during the polishing process were analyzed,and the solutions were proposed. |
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| Keywords: | Silicon wafer CMP(Chemical Mechanical Polishing) Material removal rate Defect |
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