| Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope |
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| 引用本文： | 何秀坤,王琴,汝琼娜,李光平. Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope[J]. 稀有金属(英文版), 1993, 0(4) |
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| 作者姓名： | 何秀坤 王琴 汝琼娜 李光平 |
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| 作者单位： | Tianjin Electronic Materials Research Institute P.O.Box 55，Tianjin 300192，China，Tianjin Electronic Materials Research Institute，P.O.Box 55，Tianjin 300192，China，Tianjin Electronic Materials Research Institute，P.O.Box 55，Tianjin 300192，China，Tianjin Electronic Materials Research Institute，P.O.Box 55，Tianjin 300192，China |
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| 摘 要： | Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature for the first time.The experimental results showed that the carbon concentration inGaAs thin wafers can be measured directly with simple treatment.The calculation method of carbon concen-tration is in agreement with that for normal IR spectrum with 0.5 cm~(-1)resolution.The resolution of1 cm~(-1)can be taken in order to obtain a high signal-to-noise(S/N)ratio using 2.34×10~(16)cm~(-2)calibration factor for calculating carbon concentration at room temperature.
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Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope |
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| He Xiukun,Wang Qin,Ru Qiongna,Li Guangping Tianjin Electronic Materials Research Institute,P.O.Box ,Tianjin ,China. Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope[J]. Rare Metals, 1993, 0(4) |
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| Authors: | He Xiukun Wang Qin Ru Qiongna Li Guangping Tianjin Electronic Materials Research Institute P.O.Box Tianjin China |
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| Affiliation: | He Xiukun,Wang Qin,Ru Qiongna,Li Guangping Tianjin Electronic Materials Research Institute,P.O.Box 55,Tianjin 300192,China |
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| Abstract: | |
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| Keywords: | Infrared Microscope SI-GaAs thin wafers Substitutional carbon concentration |
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