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Optical response of planar Mo/n-Si/Mo structures with long neutral region and Schottky barriers at both ends |
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| Authors: | H. Takano M. Kimura T. Ando S. Niemcharoen Y. Yasumura K. Sato |
| Affiliation: | a Department of Electronics, School of Engineering, Tokai University, Kitakaname 1117, Hiratsuka, Kanagawa 259 1292, Japan b Faculty of Engineering, Electronics Research Centre, King Mongkut's, Institute of Technology Ladkrabang, Charongkrung Road, Ladkrabang, Bangkok 10520, Thailand |
| Abstract: | Influence of neutral region on the low frequency (100 Hz to 1 MHz) optical signal response of planar molybdenum/n-type silicon/molybdenum structures with Schottky barriers at both ends has been investigated. It is found that the presence of the neutral region under optical illumination can enhance the device signal current and the spectrum of increment in the signal current exhibits a low turn-over frequency due to its diffusion mechanism. An equivalent circuit representation of such a structure has also been proposed. |
| Keywords: | Optical sensor Photodiode Optical response Metal/semiconductor/metal Planar structure Mo/n–Si/Mo |
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