| 碳化硅超细粉的制备新法 |
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| 引用本文： | 戴长虹,水丽. 碳化硅超细粉的制备新法[J]. 中国粉体技术, 2001, 7(1): 10-11 |
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| 作者姓名： | 戴长虹 水丽 |
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| 作者单位： | 1. 青岛化工学院电镜室,
2. 沈阳工业学院 , |
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| 摘 要： | 用一种新的方法———双重加热法制备了直径在 5 0～ 6 0nm范围内的SiC超细粉 ,用化学分析方法、X射线衍射、透射电子显微镜等手段对SiC超细粉进行了表征。研究结果表明 ,用双重加热法制备SiC超细粉的最佳温度为135 0℃ ,恒温时间为 6 0min ,SiC超细粉的产率可达 98% (质量分数 )左右
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| 关 键 词： | 碳化硅 超细粉 制备 |
| 文章编号： | 1008－5548（2001）01－0010－02 |
| 修稿时间： | 2000-06-07 |
New Method for Preparation of SiC Ultrafine Powders |
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| DAI Chang-hong,SHUI Li. New Method for Preparation of SiC Ultrafine Powders[J]. China Powder Science and Technology, 2001, 7(1): 10-11 |
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| Authors: | DAI Chang-hong SHUI Li |
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| Affiliation: | WT5BX]DAI Chang hong 1,SHUI Li 2[WT6BZ] |
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| Abstract: | The SiC ultrafine powders，which diameter is in the range of 50～60nm，were prepared by a new method named double heating method．SiO2 nanom eter powder and carbon nanometer powder were used as starting materials．The char acter of the SiC ultrafine powders was d etermined by the chemical analysis metho ld，XRD and TEM．The experimental results show that the best temperature for prepa ring SiC ultrafine powders is 1350℃，and the time is 60min，the yield ratio of the SiC ultrafine powders is about 98％． The double heating method is a new method f or prepared SiC ultrafine powders with a large amount and a low costing． |
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| Keywords: | SiC ultrafine powder preparation |
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