| 瞬态退火过程中离子注入层杂质浓度分布的计算 |
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| 引用本文： | 范永平,罗晋生. 瞬态退火过程中离子注入层杂质浓度分布的计算[J]. 固体电子学研究与进展, 1988, 0(1) |
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| 作者姓名： | 范永平 罗晋生 |
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| 作者单位： | 西安交通大学半导体教研室(范永平)，西安交通大学半导体教研室(罗晋生) |
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| 摘 要： | 本文在菲克定律的基础上导出了瞬态退火过程中注入杂质浓度分布与退火时间的关系,并对此理论结果进行了实验验证,两者符合良好。本文还讨论了瞬态退火过程中的增强扩散效应。
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Calculation of Impurity Concentration Profile for Transient Annealing Process |
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| Abstract: | The implanted impurity concentration profile for transient annealing process has been derived on the basis of the diffusion law and the experimental results have been demonstrated. The results show that the theory is in good agreement with the experiments. In addition, the transient enhanced diffusion during the rapid annealing of boron implanted silicon has also been discussed. |
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