Correlation impedance in transistors at high injection

It is shown that the correlation impedance R_cor of a p⁺-n-p transistor at high injection and low frequencies is given as $\text{R}{}_{\mathrm{<mtext>cor</mtext>}}\text{= 2(}\text{μ}{}_{\mathrm{<mtext>p</mtext>}}\text{μ}{}_{\mathrm{n}}\text{)(}\text{k}\text{T}\text{q}\text{I}{}_{\mathrm{<mtext>Ep</mtext>}}\text{)}$, which is small for silicon transistors. For n⁺-p-n transistors under the same conditions $\text{R}{}_{\mathrm{<mtext>cor</mtext>}}\text{= 2(}\text{μ}{}_{\mathrm{n}}\text{μ}{}_{\mathrm{p}}\text{)(}\text{k}\text{T}\text{q}\text{I}{}_{\mathrm{<mtext>EP</mtext>}}\text{)}$, which is large for silicon transistors. This strong asymmetry between p⁺-n-p and n⁺-p-n silicon transistors should be measurable.