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A lambda-type current-controlled negative resistance device |
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| Authors: | Ming-Guang Yi |
| Affiliation: | Beijing Research Institute of Semiconductor Devices, P.O. Box 1031, Beijing, China |
| Abstract: | A new structure is presented for the implementation of a λ-type current-controlled negative resistance device in conventional bipolar technology. Expressions for the characteristic parameters, such as: the holding current, the peak current, and the peak voltage, are given. |
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