Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p+-nGaAs diodes

The effect of ≈2 MeV electron bombardment on the reverse characteristics and tensoelectric properties in p⁺-nGaAs diodes is investigated. The reverse breakdown voltage showed a weak increase due to irradiation and an anomalous temperature dependence in the range 77–300 K. The I–V characteristics in electron-irradiated diodes revealed a high pressure sensitivity (tensosensibility) to the external hydrostatic pressure (up to 6 · 10⁸ Pa). The peculiarities in the reverse I–V characteristics of diodes investigated point to the presence of a radiation-induced deep trap (acceptor-type level at about E₀ ? 0.3 + 0.4 eV), which is attached to the Γ₁₅^V-maximum of the valence band.