| Si-Si直接键合的杂质分布 |
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| 引用本文： | 陈新安,黄庆安.Si-Si直接键合的杂质分布[J].半导体学报,2006,27(11):2051-2055. |
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| 作者姓名： | 陈新安 黄庆安 |
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| 作者单位： | 绍兴文理学院，绍兴 312000;东南大学MEMS 教育部重点实验室，南京 210096 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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国家自然科学基金 |
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| 摘 要： | 在Si-Si直接键合过程中,界面处存在一层很薄的厚度恒定的本征SiO2.Si对SiO2中的杂质的抽取效应,导致了杂质在界面处的浓度大大降低,根据改进了的杂质在Si-Si直接键合片中分布模型,推导出了杂质分布的表达式,在理论上和实验上都对该式进行了验证.杂质通过SiO2再向Si中扩散的杂质总量与Si-Si扩散相比大大减少,使所形成的p-n 结的结深减小.
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| 关 键 词： | Si-Si直接键合 抽取效应 本征SiO2 直接键合 杂质分布 Direct Bonding Silicon Distribution 结深 扩散相 验证 实验 理论 表达式 分布模型 键合片 改进 浓度 效应 抽取 本征 厚度 存在 |
| 文章编号： | 0253-4177(2006)11-2051-05 |
| 收稿时间： | 04 12 2006 12:00AM |
| 修稿时间： | 06 3 2006 12:00AM |
Impurity Distribution of Silicon Direct Bonding |
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| Chen Xin''an and Huang Qing''an.Impurity Distribution of Silicon Direct Bonding[J].Chinese Journal of Semiconductors,2006,27(11):2051-2055. |
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| Authors: | Chen Xin'an and Huang Qing'an |
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| Affiliation: | Shaoxing College of Arts and Sciences,Shaoxing 312000,China;Key Laboratory of the MEMS of Ministry of Education,Southeast University,Nanjing 210096,China |
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| Abstract: | There is a thin layer of native oxide between two directly bonded silicon wafers.The silicon extracts impurity from the oxide,thus drastically decreasing the impurity concentration at the interface of SiO2-Si.Based on the modified model of silicon direct bonding,an expression of impurity distribution is derived and verified by theory and experiment.Finally,it is found that the total impurity in silicon with oxide is much less than that without oxide,which decreases the junction depth of p-n+ junction. |
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| Keywords: | silicon direct bonding extractive effect native oxide |
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