Effect of electrical resistivity on ultrasonic attenuation in NpTe |
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Authors: | Devraj Singh Pramod K Yadawa Saurabh K Sahu |
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Affiliation: | Department of Applied Physics, AMITY School of Engineering and Technology1, Bijwasan, New Delhi 110 061, India |
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Abstract: | Ultrasonic attenuation due to electron-phonon interaction (EPI) has been computed in semimetallic single crystal neptunium telluride (NpTe) in low temperatures 5-80 K. For the same evaluation, we have also evaluated ultrasonic velocity, electronic viscosity and second order elastic constants (SOEC). The SOEC of NpTe have been evaluated using the Born model of ionic solid. The behaviour of ultrasonic attenuation is quite similar to its inverse resistivity. The ultrasonic attenuation due to EPI is most significant at 40 K. Computed results of ultrasonic parameter have been compared and discussed. |
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Keywords: | A Semimetallic C Ultrasonic properties |
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