Growth of Zn1−xMgxO films with single wurtzite structure by MOCVD process and their application to Cu(InGa)(SSe)2 solar cells |
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| Authors: | FY Meng Y Chiba A Yamada M Konagai |
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| Affiliation: | aQuantum Nanoelectronics Research Center, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152 8552, Japan;bDepartment of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152 8552, Japan |
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| Abstract: | The effect of the growth temperature and Mg/(Mg+Zn) molar flow rate ratio of metal organic sources on the crystalline structure of Zn1−xMgxO (ZMO) films is investigated in thin films prepared by metal organic chemical vapor deposition (MOCVD) process on fused silica in order to obtain the wide-bandgap ZMO films with single wurtzite structure, which is very important to achieve high-efficiency chalcopyrite solar cells. Based on the measurements and analysis of the fabricated samples, the ZMO films with the controllable bandgap from 3.3 to 3.72 eV can exhibit a single wurtzite phase depending on the growth temperature and Mg content. Furthermore, the resistivity of ZMO films is comparable to that of ZnO film. It is a good indication that ZMO film is superior to CdS or ZnO films as buffer and window layers mainly due to its controllable bandgap energy and safety. As a result, the solar cells with ZMO buffer were fabricated without any surface treatment of Cu(InGa)(SSe)2 (CIGSSe) absorber or antireflection coating, and the efficiency of 10.24% was obtained. |
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| Keywords: | Zn1− xMgxO (ZMO) films Wurtzite structure Phase segregation Controllable bandgap MOCVD |
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