Oxidation of CVD Si3N4 at 1550° to 1650°C |
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Authors: | TOSHIO HIRAI,KOICHI NIIHARA ,TAKASHI GOTO |
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Affiliation: | Tohoku University, Sendai 980, Japan |
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Abstract: | A thermo gravimetric study of the oxidation behavior of chemically vapor-deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films. |
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