CuInS2 thin-films solar cells fabricated by sulfurization of oxide precursors

CuInS₂ thin-films were prepared by sulfurization of Cu---In---O precursors in H₂S gas. X-ray diffraction patterns showed that In₂O₃ phases did not remain in the CuInS₂ films sulfurized in a H₂S and H₂ atmosphere, whereas In₂O₃ phase remained in the films sulfurized in a H₂S and Ar atmosphere. The performance of CuInS₂ solar cells were studied as a function of the H₂ gas pressure during sulfurization. The open-circuit voltage, short-circuit current and fill factor increased with increasing the H₂ gas pressure. The conversion efficiency of the CuInS₂ solar cells is strongly affected by the reduction of the Cu---In---O precursors.