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Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration |
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| Authors: | SK Sharma Himanshu GuptaLP Purohit K-NP Kumar BoGyun KimR Kumar RM Mehra |
| Affiliation: | a Department of Information and Communications, Cheju Halla College, Jeju-City 690708, Republic of Korea b Department of Physics, Gurukul Kangri Vishwavidyalaya, Haridwar 249404, India c Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA d Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India |
| Abstract: | We report the effects of the thermal annealing and dopant concentration on the optical properties of Se or S-doped hydrogenated amorphous silicon thin films. The Se and S-doped a-Si:H (a-Si,Se:H and a-Si,S:H) thin films were prepared by glow discharge plasma enhanced chemical vapor deposition (GD-PECVD) on 7059 corning glass. The films were subsequently annealed in vacuum in the temperature range from 100 to 500 °C. Influence of doping and annealing was examined by means of optical transmission spectroscopy of the films in the wavelength range of 300-1100 nm taken at room temperature. The absorption coefficients and refractive indices decreased as the annealing temperature increased from 100 to 300 °C and then increased again as the annealing temperature further increased to 500 °C, while the highest bandgap was observed at 300 °C for all of the samples. For a given dopant concentration bandgap was observed to be higher in a-Si,S:H than a-Si,Se:H thin films. |
| Keywords: | 71 55Jv 71 55 Jv 81 05 Gc 81 40Tv |
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